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| TPCA8010-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type(I -MOSV) TPCA8010-H High Speed and High Efficiency DC-DC Converters * * * * * * * Small footprint due to small and thin package 6.00.3 TENTATIVE Unit: mm 1.27 8 0.40.1 5 0.50.1 0.05 M A Low drain-source ON resistance: R DS (ON) = 380mO (typ.) High forward transfer admittance: |Yfs| = S (typ.) Low leakage current: IDSS = 100 A (max) (V DS = 100 V) Enhancement mode: V th = 2 to 4V (V DS = 10 V, ID = 1 mA) 5.00.2 High speed switching Small gate charge: Qg = 10nC (typ.) 0.150.05 1 5.00.2 0.950.05 4 0.595 A 0.1660.05 Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol V DSS V DGR V GSS ID IDP PD PD Rating 200 200 20 5.5 11 15 2.8 W W Unit V V V A S 1 0.05 S 4 1.10.2 0.60.1 4.250.2 8 5 0.80.1 1,2,3*F SOURCE 5,6,7,8*F DRAIN 4*F GATE Pulsed (Note 1) Drain power dissipation Drain power dissipation (Tc=25*Z ) (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25*Z (Note 4) ) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA Weight: 0.08 g (typ.) ? ? ? PD 1.6 W EA S IAR EAR Tch Tstg 19 5.5 1.5 150 -55~150 mJ A mJ C C Circuit Configuration 8 7 6 3.50.2 5 Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2 3 4 1 2004-3-2 TPCA8010-H Thermal Characteristics Characteristics Thermal resistance, channel to case (Tc=25*Z ) Thermal resistance, channel to ambient (t = 10 s) (t = 10 s) (Note 2a) Symbol Rth (ch-c) Max 2.78 Unit C/W TENTATIVE Rth (ch-a) 44.6 C/W Thermal resistance, channel to ambient (Note 2b) Rth (ch-a) 78.1 C/W Marking (Note 5) TPCA 8010-H *| Type Lot No. Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) (a) (b) Note 3: VDD = 50 V*C Tch = 25C (initial)*CL = 1 mH*CRG = 25 IAR = 5.5 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) 2 2004-3-2 TPCA8010-H Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current Symbol IGSS IDSS V (BR) DSS Drain-source breakdown voltage V (BR) DSX V (BR) DSX Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge Gate switch charge tf toff Qg Qgs1 Qgd QSW V DD 160 V, V GS = 10 V , ID = 5.5A - V th RDS (ON) |Yf s | Ciss Crss Coss tr ton 10 V V GS 0V 4.7 ID = 2.7 A V OUT RL = 37 V DS = 10 V, V GS = 0 V , f = 1 MHz Test Condition V GS = 16 V, V DS = 0 V V DS = 200 V, V GS = 0 V ID = 10 mA, V GS = 0 V ID = 10 mA, V GS = -5 V ID = 10 mA, V GS = -20 V V DS = 10 V, ID = 1mA V GS = 10 V, ID = 2.7A V DS = 10 V, ID = 2.7A Min 200 200 150 2.0 TBD TENTATIVE Typ. 0.38 TBD 600 20 220 (7) (17) (13) (70) (10) (7.6) (2.4) (3.7) Max *}10 100 4.0 `(0.45) ns nC pF V m S Unit A A V V DD 100V - V < 1%, tw = 10 s Duty = Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP V DSF Test Condition IDR = 5.5A, V GS = 0 V Min Typ. Max 11 -2.0 Unit A V 3 2004-3-2 TPCA8010-H RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended n warranted for usage in equipment that requires or extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 4 2004-3-2 |
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